Product Summary
The BLF245 is a Silicon N-channel enhancement mode vertical D-MOS transistor. It is designed for large signal amplifier applications in the VHF frequency range. The BLF245 is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.
Parametrics
BLF245 absolute maximum ratings: (1)drain-source voltage:65V; (2)gate-source voltage:20V; (3)DC drain current:6A; (4)total power dissipation:68W; (5)storage temperature:-65℃ to 150℃; (6)junction temperature:200℃.
Features
BLF245 features: (1)High power gain; (2)Low noise figure; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() BLF245 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF MOSFET Power RF Transistor |
![]() Data Sheet |
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![]() BLF245,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power RF DMOS 30W VHF |
![]() Data Sheet |
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![]() BLF245B |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BLF245B,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power RF DMOS 30W VHF P-P |
![]() Data Sheet |
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