(China (Mainland))
Product Summary
The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The RA13H1317M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. The nominal output power of the RA13H1317M becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
Parametrics
RA13H1317M absolute maximum ratings: (1)Drain Voltage:17V ; (2)Gate Voltage:6V ; (3)Input Power:100mW; (4)Output Power:20W ; (5)Operation Case Temperature Range:-30℃ to +110℃; (6)Storage Temperature Range:-40℃ to +110℃.
Features
RA13H1317M features: (1)Enhancement-Mode MOSFET Transistors; (2)Pout>13W, nT>40% @ VDD=12.5V, VGG=5V, Pin=50mW ; (3)Broadband Frequency Range: 135-175 MHz ; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V ; (5)Module Size: 66 x 21 x 9.88 mm ; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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 RA13H1317M |
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Negotiable |
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RA1316NG3000 |
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RA1316NG6000 |
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RA1320NG |
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RA13H1317M |
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Negotiable |
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Negotiable |
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