Product Summary

The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current of the RA60H1317M increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power of the RA60H1317M becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. The RA60H1317M module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

Parametrics

RA60H1317M maximum ratings: (1)VDD, Drain Voltage, VGG<5V: 17 V; (2)VGG, Gate Voltage VDD<12.5V, Pin=0mW: 6 V; (3)Pin, Input Power: 100 mW; (4)Pout, Output Power: 75 W; (5)Tcase(OP), Operation Case Temperature Range, f=135-175MHz, ZG=ZL=50Ω: -30 to +110 ℃; (6)Tstg, Storage Temperature Range: -40 to +110 ℃.

Features

RA60H1317M features: (1)Enhancement-Mode MOSFET Transistors (IDD=0 @ VDD=12.5V, VGG=0V); (2)Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 135-175MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)Module Size: 66 x 21 x 9.88 mm; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.

Diagrams

RA60H1317M block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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RA60H1317M
RA60H1317M
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RA60H1317M1A
RA60H1317M1A
Other

Data Sheet
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