Product Summary

The FF200R33KF2C is an IGBT-Module.

Parametrics

FF200R33KF2C maximum rated values: (1)collector-emitter voltage VCES: 3300 V; (2)IC,nom.: 200 A; (3)DC-collector current IC: 330 A; (4)repetitive peak collector current ICRM: 400 A; (5)total power dissipation Ptot: 2.2 kW; (6)gate-emitter peak voltage VGES: +/- 20 V.

Features

FF200R33KF2C characteristic values: (1)VCE sat: 3.4 to 4.25 V; (2)collector-emitter saturation voltage: 4.3 to 5 V; (3)gate threshold voltage: 4.2 to 6 V; (4)input capacitance Cies: 25.0 nF; (5)collector-emitter cut-off current ICES: 5.0 mA; (7)gate-emitter leakage current IGES: 400 nA.

Diagrams

FF200R33KF2C diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FF200R33KF2C
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Infineon Technologies
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Data Sheet
0-1: $523.71
1-3: $471.34
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5-10: $392.78
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